Register now After registration you will be able to apply for this opportunity online.
Implementation, Validation, and Comparison of Switching Loss Models for SiC MOSFETs
In this project, you will implement analytical switching loss models from literature in Matlab, simulate switching losses in LTspice, and compare them to the measurement results with an existing PCB.
Keywords: Wide band-gap semiconductor, SiC MOSFETs, Switching loss measurement, LTspice simulation, Semiconductor device modelling, Reverse Recovery
At HPE, Wide Band Gap (WBG) semiconductor device models are developed
for SiC MOSFETs and GaN HEMTs. For an optimal converter design,
accurate yet computationally efficient switching loss models of these semiconductor
devices are needed.
In this project, you will first re-derive several SiC MOSFET switching loss
models from literature in Matlab. Then, you will simulate switching waveforms
and calculate switching losses in LTspice. As a next step, you will
measure the switching losses with an existing PCB for a SiC Half-Bridge
at different operating conditions. Finally, you will validate and compare
your implemented models with both simulation and measurement results.
Based on your understanding of these models, a systematic comparison
should be given in the end considering assumption, accuracy and computational
effort. In addition, the temperature influence on the switching
losses, particularly reverse recovery losses, should be investigated.
Outcomes: This work is expected to provide you with an opportunity to
dig into the emerging WBG semiconductor technology.
At HPE, Wide Band Gap (WBG) semiconductor device models are developed for SiC MOSFETs and GaN HEMTs. For an optimal converter design, accurate yet computationally efficient switching loss models of these semiconductor devices are needed. In this project, you will first re-derive several SiC MOSFET switching loss models from literature in Matlab. Then, you will simulate switching waveforms and calculate switching losses in LTspice. As a next step, you will measure the switching losses with an existing PCB for a SiC Half-Bridge at different operating conditions. Finally, you will validate and compare your implemented models with both simulation and measurement results. Based on your understanding of these models, a systematic comparison should be given in the end considering assumption, accuracy and computational effort. In addition, the temperature influence on the switching losses, particularly reverse recovery losses, should be investigated. Outcomes: This work is expected to provide you with an opportunity to dig into the emerging WBG semiconductor technology.