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Design of Dynamic On-State Resistance Measurement Setup for GaN HEMTs
In this project, you will design a setup for dynamic on-state resistance measurements, covering circuit design, PCB layout, and FPGA code implementation.
GaN high-electron-mobility transistors (HEMTs) are increasingly popular
in power electronic systems due to their advantages over Si/SiC devices.
However, GaN HEMTs exhibit a dynamic behavior in on-state resistance,
where the Rds,on immediately after switching on is higher than its DC
value. Also, it has been found that the value of Rds,on is dependent on
multiple factors, including the switching condition (hard or soft). The
figure above shows an exemplary circuit to measure the Rds,on under hard
or soft switching conditions.
At HPE, a GaN HEMT is investigated for an inverter system, where accurate
measurements of its dynamic Rds,on behavior are crucial for loss
modeling and system optimization. In this project, you will design a setup
for dynamic Rds,on measurements, covering circuit design, PCB layout,
and FPGA code implementation. In case of a master thesis, you will validate
the setup and measure the characteristics of the device.
GaN high-electron-mobility transistors (HEMTs) are increasingly popular in power electronic systems due to their advantages over Si/SiC devices. However, GaN HEMTs exhibit a dynamic behavior in on-state resistance, where the Rds,on immediately after switching on is higher than its DC value. Also, it has been found that the value of Rds,on is dependent on multiple factors, including the switching condition (hard or soft). The figure above shows an exemplary circuit to measure the Rds,on under hard or soft switching conditions. At HPE, a GaN HEMT is investigated for an inverter system, where accurate measurements of its dynamic Rds,on behavior are crucial for loss modeling and system optimization. In this project, you will design a setup for dynamic Rds,on measurements, covering circuit design, PCB layout, and FPGA code implementation. In case of a master thesis, you will validate the setup and measure the characteristics of the device.
Ruida Zhang and Anliang Hu (co-supervision), ETL G12, zhang@hpe.ee.ethz.ch
Ruida Zhang and Anliang Hu (co-supervision), ETL G12, zhang@hpe.ee.ethz.ch
10% Coding
55% Hardware Design
15% Simulation
20% Theory
10% Coding 55% Hardware Design 15% Simulation 20% Theory
Interest/knowledge in design of power electronic systems, Working language: English
Interest/knowledge in design of power electronic systems, Working language: English
SAMA_Zhang_dRdson_Measurement.pdf
