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Implementation and Validation of a Compact Switching Loss Model for GaN HEMTs
In this project, you will extend an analytical SiC MOSFET switching loss model to GaN HEMTs in Matlab, simulate switching losses in LTspice, and compare them to the measurement results with an existing PCB.
At HPE, semiconductor device models are being developed for SiC MOSFETs
and GaN HEMTs for converter optimisation. So far, accurate and
computationally efficient switching loss models have been developed for SiC
MOSFETs. Although the physical conduction mechanism of GaN HEMTs
differs from that of SiC MOSFETs, the methodology of GaN device modeling
is very similar to the SiC device modeling.
In this project, you will first understand the working principle of GaN
HEMTs and identify their differences compared to MOSFETs. Then, you
will extend the existing switching loss model for GaN HEMTs in Matlab. As
a next step, you will simulate switching waveforms and calculate switching
losses in LTspice. In addition, you will measure the switching losses and in
a last step, you will validate and compare your implemented models with
both simulation and measurement results.
Outcomes: This work is expected to provide you with an opportunity to
dig into the emerging WBG semiconductor technology and to get familiar
with basic simulation and hardware measurement techniques.
At HPE, semiconductor device models are being developed for SiC MOSFETs and GaN HEMTs for converter optimisation. So far, accurate and computationally efficient switching loss models have been developed for SiC MOSFETs. Although the physical conduction mechanism of GaN HEMTs differs from that of SiC MOSFETs, the methodology of GaN device modeling is very similar to the SiC device modeling. In this project, you will first understand the working principle of GaN HEMTs and identify their differences compared to MOSFETs. Then, you will extend the existing switching loss model for GaN HEMTs in Matlab. As a next step, you will simulate switching waveforms and calculate switching losses in LTspice. In addition, you will measure the switching losses and in a last step, you will validate and compare your implemented models with both simulation and measurement results. Outcomes: This work is expected to provide you with an opportunity to dig into the emerging WBG semiconductor technology and to get familiar with basic simulation and hardware measurement techniques.
Anliang Hu, ETL F11, hu@hpe.ee.ethz.ch
Anliang Hu, ETL F11, hu@hpe.ee.ethz.ch
30% Theory
10% Simulation
40% Implementation
20% Testing
30% Theory 10% Simulation 40% Implementation 20% Testing
Interest in power electronics,
knowledge in basic electric circuit
theory
Interest in power electronics, knowledge in basic electric circuit theory