Register now After registration you will be able to apply for this opportunity online.
This opportunity is not published. No applications will be accepted.
Implementation and Validation of a Numerical Turn-off Switching Loss Model for SiC MOSFETs
In this project, you will implement analytical switching loss models from literature in Matlab, simulate switching losses in LTspice, and compare them to the measurement results with an existing PCB.
Keywords: Wide band-gap semiconductor, SiC MOSFETs, Switching loss measurement, LTspice simulation, Semiconductor device modelling, Reverse Recovery
At HPE, Wide Band Gap (WBG) semiconductor device models have been
developed for SiC MOSFETs and GaN HEMTs. For an optimal converter
design, accurate yet computationally efficient switching loss models of such
semiconductor devices are needed.
In this project, you will first derive and implement an analytical turn-off
switching loss model for SiC MOSFETs in Matlab based on a publication.
Then, you will simulate switching waveforms and calculate switching losses
in LTspice. As a next step, you will validate and compare your implemented
analytical model with both LTspice simulations and existing measurement
results from an optimally designed PCB for a SiC Half-Bridge at different
operating conditions. Finally, you will comprehensively evaluate the accuracy
of the implemented model using both device characteristics from data
sheets and those measured from a power device analyser at HPE.
At HPE, Wide Band Gap (WBG) semiconductor device models have been developed for SiC MOSFETs and GaN HEMTs. For an optimal converter design, accurate yet computationally efficient switching loss models of such semiconductor devices are needed. In this project, you will first derive and implement an analytical turn-off switching loss model for SiC MOSFETs in Matlab based on a publication. Then, you will simulate switching waveforms and calculate switching losses in LTspice. As a next step, you will validate and compare your implemented analytical model with both LTspice simulations and existing measurement results from an optimally designed PCB for a SiC Half-Bridge at different operating conditions. Finally, you will comprehensively evaluate the accuracy of the implemented model using both device characteristics from data sheets and those measured from a power device analyser at HPE.
Anliang Hu, ETL F11, hu@hpe.ee.ethz.ch
Anliang Hu, ETL F11, hu@hpe.ee.ethz.ch
30% Theory
50% Implementation
10% Simulation
10% Testing
30% Theory 50% Implementation 10% Simulation 10% Testing
Interest in power electronics,
knowledge in basic electric circuit
theory
Interest in power electronics, knowledge in basic electric circuit theory
SAMA_2025FS_TurnoffModel_new.pdf
